The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 24, 2002
Filed:
Mar. 20, 2001
Joo-Hyong Lee, Cheongju-shi, KR;
Jeong-Hwan Son, Taejon-shi, KR;
Hyundai Electronics Industries Co., Ltd., Kyoungki-do, KR;
Abstract
The method of fabricating a semiconductor device includes the steps of selectively forming an insulating oxide layer in a semiconductor substrate having a first conductivity type, wherein the semiconductor substrate has first and second regions; forming impurity layers having a second conductivity type in the first and second regions of the semiconductor substrate; forming a first mask layer in the second region of the semiconductor substrate; forming impurity layers having the second conductivity type in the first region of the semiconductor substrate by performing serial ion implantations with different doses of dopants at different acceleration energies; forming a second mask layer in the first region of the semiconductor substrate; and forming impurity layers having the first conductivity type in the second region of the semiconductor substrate by performing serial ion implantations with different doses of dopants at different acceleration energies.