Joo-Hyong Lee

Title: Innovations of Joo-Hyong Lee

Introduction

Joo-Hyong Lee is a notable inventor based in Cheongju-shi, South Korea. He has made significant contributions to the field of semiconductor technology, holding a total of three patents. His work focuses on enhancing the performance and reliability of semiconductor devices.

Latest Patents

One of his latest patents is titled "Latch-up resistant CMOS structure." This invention provides a semiconductor device that includes a semiconductor substrate with a first conductivity type, a first well with a second conductivity type, and a second well with the first conductivity type. It features two MOS transistors, each with distinct conductivity types, and heavily doped regions of buried layers corresponding to the contact regions in the wells.

Another significant patent is the "Method of forming retrograde doping file in twin well CMOS device." This method involves selectively forming an insulating oxide layer in a semiconductor substrate, followed by the formation of impurity layers in both regions of the substrate. The process includes the use of mask layers and serial ion implantations with varying doses of dopants at different acceleration energies.

Career Highlights

Joo-Hyong Lee is currently employed at Hyundai Electronics Industries Co. Ltd., where he continues to innovate in the semiconductor industry. His expertise in CMOS technology has positioned him as a valuable asset to his company.

Collaborations

He has collaborated with Jeong-Hwan Son, contributing to advancements in semiconductor technology through their combined efforts.

Conclusion

Joo-Hyong Lee's contributions to semiconductor technology through his patents and work at Hyundai Electronics Industries Co. Ltd. highlight his role as an influential inventor in the field. His innovations continue to shape the future of semiconductor devices.