The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 19, 2002
Filed:
Jul. 14, 1998
Jeong-Hwan Son, Taejeon, KR;
Hyeong-Mo Yang, Seoul, KR;
LG Semicon Co., Ltd., Chungcheongbuk-do, KR;
Abstract
In a semiconductor device and method for manufacturing the same, a buried insulating layer is formed on a semiconductor substrate, multiple depletion regions of a first conductivity type are formed on the buried insulating layer and separated from one another, a field oxide layer is formed among the depletion regions of the buried insulating layer, a gate oxide layer is formed on the depletion regions, a gate is formed on the gate oxide layer, impurity regions that are heavily doped with impurities of a second conductivity type is formed in the depletion regions on both sides of the gate to define a source and drain, and a counter doping layer that is lightly doped with impurities of the second conductivity type is formed under the channel defined by a portion of the depletion regions positioned between the impurity regions. The counter doping layer is formed at a predetermined or fixed distance from the upper surface of the depletion region defining the channel, overlapping the lower portion of the depletion region to achieve uniform thickness in at least a portion of the depletion region.