Hyeong-Mo Yang

Title: Hyeong-Mo Yang: Innovator in Semiconductor Technology

Introduction

Hyeong-Mo Yang is a prominent inventor based in Seoul, South Korea. He has made significant contributions to the field of semiconductor technology, holding a total of four patents. His work focuses on enhancing the performance and efficiency of metal-oxide-semiconductor field-effect transistors (MOSFETs).

Latest Patents

Hyeong-Mo Yang's latest patents include innovative designs for MOSFET devices. One of his patents describes layouts and vertical structures of MOSFET devices, which include a first active area and a first gate electrode that crosses this area. This design aims to optimize the alignment of source and drain contacts, enhancing device performance. Another notable patent details a method of making a semiconductor device with an hourglass-shaped gate electrode. This design reduces the short-channel effect by varying the length of the gate electrode, thereby improving the effective channel length at the sides of the transistor.

Career Highlights

Throughout his career, Hyeong-Mo Yang has worked with leading companies in the semiconductor industry, including Samsung Electronics and LG Semicon. His experience in these organizations has allowed him to develop cutting-edge technologies that push the boundaries of semiconductor design.

Collaborations

Hyeong-Mo Yang has collaborated with notable colleagues such as Jeong-Hwan Son and Jae-Hoon Lee. These partnerships have contributed to the advancement of semiconductor technologies and innovations.

Conclusion

Hyeong-Mo Yang is a distinguished inventor whose work in semiconductor technology has led to significant advancements in the field. His patents reflect a commitment to innovation and excellence in design, making him a key figure in the industry.