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For the Inventor, By the Inventor

Hwaseong, South Korea

Jeong-Heon Park

This inventor holds 35 USPTO granted patents and 10 published patent applications, primarily in Magnetic Memory Devices. Top assignees: Samsung Electronics Co., Ltd., International Business Machines Corporation, I. Active years: 2005-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jeong-Heon Park. Retrieved from https://idiyas.com/inventor/jeong-heon-park

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 35 

% Patents Active = 80.0

Average Co-Inventor Count = 4.1

ph-index = 4

Forward Citations = 43(Granted Patents)


Location History:

  • Suwon-shi, KR (2005 - 2007)
  • Suwon-si, KR (2008)
  • Seoul, SK (2016)
  • Seoul, KR (2017 - 2020)
  • Hwaseong-si, KR (2014 - 2024)

Company Filing History:

goldMedal33 out of 132,108 
 
Samsung Electronics Co., Ltd.
 patents
silverMedal10 out of 166,351 
 
International Business Machines Corporation
 patents
bronzeMedal1 out of 2 
 
I
 patents
4. 1 out of 2,790 
 
Korea Advanced Institute of Science and Technology
 patents
5. 1 out of 6,229 
 
Samsung Electronics Ltd.
 patents
where one patent can have more than one assignee

Years Active: 2005-2026

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Areas of Expertise:
Magnetic Memory
Memristor
Magnetoresistive RAM
Sputtering Apparatus
Magnetic Tunnel Junction
Semiconductor Device
Data Retention
Spin Orbit Torque
Substrate Deposition
Chemical Mechanical Polishing
Memory Fabrication
Magnetic Exchange Coupling
35 patents (USPTO):Explore Patents
1. 12648363 - Magnetic tunnel junction device and stochastic computing system including the same (2026-06-02),
2. 12446474 - Magnetic memory devices (2025-10-14),
3. 12315542 - Memristor element with a magnetic domain wall in a magnetic free layer moved by spin orbit torque, synapse element and neuromorphic processor including the same (2025-05-27),
4. 12295268 - Magnetic memory device (2025-05-06),
5. 12245518 - Magnetic memory device (2025-03-04),
6. 11942128 - Magnetic memory device (2024-03-26),
7. 11834738 - Sputtering apparatus and method of fabricating magnetic memory device using the same (2023-12-05),
8. 11659770 - Semiconductor device, magnetoresistive random access memory device, and semiconductor chip including the same (2023-05-23),
9. 11535930 - Sputtering apparatus and method of fabricating magnetic memory device using the same (2022-12-27),
10. 11535929 - Apparatus for depositing a substrate and deposition system having the same (2022-12-27),
11. 11205679 - Magnetic memory device including a free layer and a pinned layer (2021-12-21),
12. 11127786 - Magnetic memory device (2021-09-21),
13. 10910552 - Magnetic memory device, method for manufacturing the same, and substrate treating apparatus (2021-02-02),
14. 10804458 - Boron segregation in magnetic tunnel junctions (2020-10-13),
15. 10777737 - Magnetoresistive random access memory device (2020-09-15),

Title: Jeong-Heon Park: Innovator from Hwaseong-si, KR

Introduction: Jeong-Heon Park is a renowned inventor hailing from Hwaseong-si, South Korea, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Jeong-Heon Park holds several patents in the areas of electronics, robotics, and artificial intelligence, showcasing his expertise and creativity in developing cutting-edge solutions.

Career Highlights: Throughout his career, Jeong-Heon Park has worked with leading tech companies, spearheading projects that have revolutionized the industry and earned him recognition for his visionary ideas.

Collaborations: Park has collaborated with top researchers and engineers, both locally and internationally, to bring his inventions to life and push the boundaries of what is possible in the world of technology.

Conclusion: Jeong-Heon Park's relentless pursuit of innovation and his passion for creating solutions that make a difference have solidified his position as a trailblazer in the field of technology, inspiring the next generation of inventors and innovators.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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