The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 04, 2025

Filed:

Sep. 30, 2021
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Ung Hwan Pi, Hwaseong-si, KR;

Seonggeon Park, Seongnam-si, KR;

Jeong-Heon Park, Hwaseong-si, KR;

Sung Chul Lee, Osan-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10N 50/80 (2023.01); H01F 10/32 (2006.01); H10B 61/00 (2023.01); H10N 50/85 (2023.01);
U.S. Cl.
CPC ...
H10N 50/80 (2023.02); H01F 10/3254 (2013.01); H01F 10/3272 (2013.01); H01F 10/3286 (2013.01); H10B 61/00 (2023.02); H10N 50/85 (2023.02);
Abstract

A magnetic memory device includes a first magnetic layer extending in a first direction, a pinned layer on the first magnetic layer, and a second magnetic layer vertically overlapping with the pinned layer with the first magnetic layer interposed between the pinned layer and the second magnetic layer. The first magnetic layer includes, a plurality of magnetic domains arranged in the first direction, and at least one magnetic domain wall between the plurality of magnetic domains, and a magnetization direction of the second magnetic layer is substantially parallel to a top surface of the first magnetic layer.


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