The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 06, 2025

Filed:

Apr. 19, 2022
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Byongguk Park, Daejeon, KR;

Jeong-Heon Park, Hwaseong-si, KR;

Kyung-Jin Lee, Daejeon, KR;

Jeongchun Ryu, Daejeon, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01F 10/32 (2005.12); G11C 11/16 (2005.12); H10B 61/00 (2022.12); H10N 52/00 (2022.12); H10N 52/80 (2022.12); H10N 52/01 (2022.12);
U.S. Cl.
CPC ...
H10N 52/80 (2023.01); G11C 11/161 (2012.12); H01F 10/3254 (2012.12); H01F 10/3286 (2012.12); H01F 10/329 (2012.12); H10B 61/22 (2023.01); H10N 52/00 (2023.01); H10N 52/01 (2023.01);
Abstract

A magnetic memory device includes a conductive line extending in a first direction, a magnetic tunnel junction structure on a first surface of the conductive line, the magnetic tunnel junction structure comprising at least two magnetic patterns and a barrier pattern between the at least two magnetic patterns, and a magnetic layer on a second surface of the conductive line, which is opposite to the first surface. The magnetic layer includes magnetization components having a magnetization in a direction which is parallel to the second surface and intersects the first direction.


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