The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 13, 2020

Filed:

Jan. 08, 2019
Applicants:

International Business Machines Corporation, Armonk, NY (US);

Samsung Electronics, Co., Ltd., Gyeonggi-Do, KR;

Inventors:

Guohan Hu, Yorktown Heights, NY (US);

Younghyun Kim, Seoul, KR;

Chandrasekara Kothandaraman, New York, NY (US);

Jeong-Heon Park, Seoul, KR;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 43/08 (2006.01); H01L 27/22 (2006.01); H01L 43/10 (2006.01); H01L 43/12 (2006.01); H01L 43/02 (2006.01);
U.S. Cl.
CPC ...
H01L 43/08 (2013.01); H01L 27/226 (2013.01); H01L 43/12 (2013.01); H01L 43/02 (2013.01); H01L 43/10 (2013.01);
Abstract

Memory devices and methods of forming the same include forming a memory stack over a bottom electrode. The memory stack has a free magnetic layer formed on the tunnel barrier layer. A first boron-segregating layer is formed directly on the free magnetic layer. An anneal is performed to cause boron to leave the free magnetic layer at an interface with the first boron-segregating layer. A top electrode is formed over the memory stack.


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