The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 27, 2025
Filed:
Mar. 02, 2022
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Jeong-Heon Park, Hwaseong-si, KR;
Ung Hwan Pi, Hwaseong-si, KR;
Assignee:
Samsung Electronics Co., Ltd, Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/16 (2006.01); G11C 11/18 (2006.01);
U.S. Cl.
CPC ...
G11C 11/1675 (2013.01); G11C 11/1655 (2013.01); G11C 11/1657 (2013.01); G11C 11/1673 (2013.01); G11C 11/1697 (2013.01); G11C 11/18 (2013.01);
Abstract
Disclosed are a memristor element, a synapse element and a neuromorphic processor including the same. The memristor element includes a free layer including a domain wall; and a fixed layer including a material of which a magnetization direction is fixed, wherein a position of the domain wall in the free layer is changeable based on a spin orbit torque (SOT) generated by a current introduced from an outside, and wherein a resistance value, measured through both ends of the fixed layer, is based on the position of the domain wall and on a Hall voltage.