The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 21, 2021
Filed:
Aug. 30, 2019
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Joonmyoung Lee, Anyang-si, KR;
Whankyun Kim, Seoul, KR;
Jeong-Heon Park, Hwaseong-si, KR;
Woo Chang Lim, Sungnam-si, KR;
Junho Jeong, Hwaseong-si, KR;
Assignees:
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
I, Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/22 (2006.01); G11C 11/16 (2006.01); H01L 43/02 (2006.01); H01F 10/32 (2006.01); H01L 43/10 (2006.01);
U.S. Cl.
CPC ...
H01L 27/224 (2013.01); G11C 11/161 (2013.01); H01F 10/329 (2013.01); H01L 43/02 (2013.01); G11C 11/1673 (2013.01); G11C 11/1675 (2013.01); H01F 10/3286 (2013.01); H01L 43/10 (2013.01);
Abstract
Disclosed is a magnetic memory device including a line pattern on a substrate, a magnetic tunnel junction pattern on the line pattern, and an upper conductive line that is spaced apart from the line pattern across the magnetic tunnel junction pattern and is connected to the magnetic tunnel junction pattern. The line pattern provides the magnetic tunnel junction pattern with spin-orbit torque. The line pattern includes a chalcogen-based topological insulator.