IDiyas

For the Inventor, By the Inventor

San Diego, CA, United States of America

Jeffrey Xu

USPTO Granted Patents = 48 

Average Co-Inventor Count = 3.5

ph-index = 8

Forward Citations = 198(Granted Patents)


Company Filing History:

goldMedal48 out of 41,326 
 
Qualcomm Incorporated
 patents

Years Active: 2015-2020

where 'Filed Patents' based on already Granted Patents

48 patents (USPTO):
1. 10559501 - Self-aligned quadruple patterning process for Fin pitch below 20nm (2020-02-11),
2. 10504840 - Reducing tip-to-tip distance between end portions of metal lines formed in an interconnect layer of an integrated circuit (IC) (2019-12-10),
3. 10497702 - Metal-oxide semiconductor (MOS) standard cells employing electrically coupled source regions and supply rails to relax source-drain tip-to-tip spacing between adjacent MOS standard cells (2019-12-03),
4. 10497625 - Method and apparatus of multi threshold voltage CMOS (2019-12-03),
5. 10439039 - Integrated circuits including a FinFET and a nanostructure FET (2019-10-08),
6. 10354912 - Forming self-aligned vertical interconnect accesses (VIAs) in interconnect structures for integrated circuits (ICs) (2019-07-16),
7. 10347579 - Reducing tip-to-tip distance between end portions of metal lines formed in an interconnect layer of an integrated circuit (IC) (2019-07-09),
8. 10283526 - Standard cell circuits employing voltage rails electrically coupled to metal shunts for reducing or avoiding increases in voltage drop (2019-05-07),
9. 10163792 - Semiconductor device having an airgap defined at least partially by a protective structure (2018-12-25),
10. 10157992 - Nanowire device with reduced parasitics (2018-12-18),
11. 10141305 - Semiconductor devices employing field effect transistors (FETs) with multiple channel structures without shallow trench isolation (STI) void-induced electrical shorts (2018-11-27),
12. 10115723 - Complementary metal oxide semiconductor (CMOS) devices employing plasma-doped source/drain structures and related methods (2018-10-30),
13. 10102898 - Ferroelectric-modulated Schottky non-volatile memory (2018-10-16),
14. 10090244 - Standard cell circuits employing high aspect ratio voltage rails for reduced resistance (2018-10-02),
15. 10079293 - Semiconductor device having a gap defined therein (2018-09-18),

Title: Jeffrey Xu: Innovating the Future in Semiconductor Technology

Introduction:

Jeffrey Xu, a visionary innovator hailing from San Diego, CA, has made remarkable contributions to the field of semiconductor technology. With an impressive portfolio of 48 patents, Xu has showcased his expertise in pushing the boundaries of design and manufacturing processes. This article delves into his latest patents, career highlights, and collaborations, highlighting his significant impact on the industry.

Latest Patents:

One of Xu's recent patents is the "Self-aligned quadruple patterning process for Fin pitch below 20nm." This method focuses on producing FinFET devices with fin pitches of less than 20 nm. The patent introduces a technique where fins are deposited on sidewall spacers, enhancing the efficiency of the process and paving the way for advanced semiconductor designs.

Another notable patent is the "Reducing tip-to-tip distance between end portions of metal lines formed in an interconnect layer of an integrated circuit (IC)." This invention addresses the challenge of reducing the tip-to-tip distance between metal lines in an IC's interconnect layer. The patented method involves exposing a photoresist layer to light, thereby forming metal line patterns that improve space efficiency and decrease tip-to-tip distance. This innovation is pivotal in enhancing the performance and compactness of integrated circuits.

Career Highlights:

Jeffrey Xu is currently an esteemed employee of Qualcomm Incorporated, a global leader in wireless technology and innovation. Qualcomm's commitment to driving groundbreaking advancements aligns perfectly with Xu's passion for revolutionizing semiconductor technology. At Qualcomm, Xu continues to contribute towards cutting-edge research and development, shaping the future of wireless connectivity.

Collaborations:

Xu has had the privilege of working alongside exceptional individuals in his career. Notably, he has collaborated with esteemed colleagues such as Choh Fei Yeap and Stanley Seungchul Song. These collaborations have fostered a dynamic environment of shared knowledge and expertise, propelling innovation forward.

Conclusion:

Jeffrey Xu's remarkable contributions to semiconductor technology have established him as a key influencer in the industry. With an extensive patent portfolio, Xu's inventions have paved the way for more advanced chip designs and interconnect solutions. Through his work at Qualcomm Incorporated and collaborations with notable professionals, Xu continues to push the boundaries of innovation, ensuring a more connected and technologically advanced future.

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