The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 18, 2018
Filed:
Dec. 12, 2017
Applicant:
Qualcomm Incorporated, San Diego, CA (US);
Inventors:
Jeffrey Junhao Xu, San Diego, CA (US);
Kern Rim, San Diego, CA (US);
John Jianhong Zhu, San Diego, CA (US);
Stanley Seungchul Song, San Diego, CA (US);
Mustafa Badaroglu, Leuven, BE;
Vladimir Machkaoutsan, Wezemaal, BE;
Da Yang, San Diego, CA (US);
Choh Fei Yeap, Hsinchu, TW;
Assignee:
QUALCOMM Incorporated, San Diego, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/49 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/6681 (2013.01); H01L 29/4991 (2013.01); H01L 29/6653 (2013.01); H01L 29/66545 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01);
Abstract
A method includes forming a first spacer structure on a dummy gate of a semiconductor device and forming a sacrificial spacer on the first spacer structure. The method also includes etching a structure of the semiconductor device to create an opening, removing the sacrificial spacer via the opening, and depositing a material to close to define a gap.