The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 18, 2018
Filed:
Dec. 28, 2015
Applicant:
Qualcomm Incorporated, San Diego, CA (US);
Inventors:
Mustafa Badaroglu, Leuven, BE;
Vladimir Machkaoutsan, Wezemaal, BE;
Stanley Seungchul Song, San Diego, CA (US);
Jeffrey Junhao Xu, San Diego, CA (US);
Matthew Michael Nowak, San Diego, CA (US);
Choh Fei Yeap, San Diego, CA (US);
Assignee:
QUALCOMM Incorporated, San Diego, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/423 (2006.01); H01L 21/02 (2006.01); H01L 21/762 (2006.01); H01L 29/06 (2006.01); H01L 29/165 (2006.01); H01L 29/49 (2006.01); H01L 29/66 (2006.01); H01L 29/775 (2006.01); H01L 29/78 (2006.01); B82Y 10/00 (2011.01); H01L 29/08 (2006.01);
U.S. Cl.
CPC ...
H01L 29/42392 (2013.01); B82Y 10/00 (2013.01); H01L 21/02507 (2013.01); H01L 21/02532 (2013.01); H01L 21/762 (2013.01); H01L 29/0653 (2013.01); H01L 29/0673 (2013.01); H01L 29/086 (2013.01); H01L 29/0878 (2013.01); H01L 29/165 (2013.01); H01L 29/4966 (2013.01); H01L 29/66439 (2013.01); H01L 29/66484 (2013.01); H01L 29/66545 (2013.01); H01L 29/66795 (2013.01); H01L 29/775 (2013.01); H01L 29/7831 (2013.01);
Abstract
A nanowire transistor is provided that includes a well implant having a local isolation region for insulating a replacement metal gate from a parasitic channel. In addition, the nanowire transistor includes oxidized caps in the extension regions that inhibit parasitic gate-to-source and gate-to-drain capacitances.