The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 25, 2018
Filed:
Jul. 28, 2014
Applicant:
Qualcomm Incorporated, San Diego, CA (US);
Inventors:
John Jianhong Zhu, San Diego, CA (US);
Jeffrey Junhao Xu, San Diego, CA (US);
Choh Fei Yeap, San Diego, CA (US);
Stanley Seungchul Song, San Diego, CA (US);
Kern Rim, San Diego, CA (US);
Assignee:
QUALCOMM Incorporated, San Diego, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/528 (2006.01); H01L 21/768 (2006.01); H01L 21/311 (2006.01); H01L 21/321 (2006.01); H01L 23/522 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5283 (2013.01); H01L 21/31111 (2013.01); H01L 21/3212 (2013.01); H01L 21/7682 (2013.01); H01L 21/76831 (2013.01); H01L 23/5222 (2013.01); H01L 23/53295 (2013.01); H01L 21/76807 (2013.01); H01L 2924/0002 (2013.01);
Abstract
An apparatus includes a first interconnect and a first barrier structure. The first barrier structure is in contact with a dielectric material. The apparatus further includes a first protective structure in contact with the first barrier structure and an etch stop layer. An airgap is defined at least in part by the first protective structure and the etch stop layer.