The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 11, 2020
Filed:
Sep. 20, 2016
Applicant:
Qualcomm Incorporated, San Diego, CA (US);
Inventors:
Stanley Song, San Diego, CA (US);
Jeffrey Xu, San Diego, CA (US);
Da Yang, San Diego, CA (US);
Kern Rim, San Diego, CA (US);
Choh Fei Yeap, San Diego, CA (US);
Assignee:
QUALCOMM Incorporated, San Diego, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/8238 (2006.01); H01L 27/092 (2006.01); H01L 29/10 (2006.01); H01L 29/66 (2006.01); H01L 21/3065 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823807 (2013.01); H01L 21/3065 (2013.01); H01L 21/823821 (2013.01); H01L 27/0924 (2013.01); H01L 29/1037 (2013.01); H01L 29/66795 (2013.01);
Abstract
A method of producing a FinFET device with fin pitch of less than 20 nm is presented. In accordance with some embodiments, fins are deposited on sidewall spacers, which themselves are deposited on mandrels. The mandrels can be formed by lithographic processes while the fins and sidewall spacers formed by deposition technologies.