The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 03, 2019
Filed:
Jan. 25, 2018
Applicant:
Qualcomm Incorporated, San Diego, CA (US);
Inventors:
Jeffrey Junhao Xu, San Diego, CA (US);
Choh Fei Yeap, Hsinchu, TW;
Assignee:
QUALCOMM Incorporated, San Diego, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8234 (2006.01); H01L 21/02 (2006.01); H01L 21/28 (2006.01); H01L 21/3213 (2006.01); H01L 27/088 (2006.01); H01L 29/161 (2006.01); H01L 29/49 (2006.01); H01L 29/51 (2006.01);
U.S. Cl.
CPC ...
H01L 21/82345 (2013.01); H01L 21/02244 (2013.01); H01L 21/02532 (2013.01); H01L 21/28088 (2013.01); H01L 21/32133 (2013.01); H01L 21/823431 (2013.01); H01L 27/0886 (2013.01); H01L 29/161 (2013.01); H01L 29/4966 (2013.01); H01L 29/517 (2013.01);
Abstract
A first and a second instance of a common structured stack are formed, respectively, on a first fin and a second fin. The common structured stack includes a work-function metal layer, and a barrier layer. The barrier layer of the first instance of the common structured stack is etched through, and the work-function metal layer of the first instance of the common structure is partially etched. The partial etch forms a thinner work-function metal layer, having an oxide of the work-function metal as a new barrier layer. A gate element is formed on the new barrier layer.