The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 02, 2018
Filed:
Jun. 27, 2017
Qualcomm Incorporated, San Diego, CA (US);
Jeffrey Junhao Xu, San Diego, CA (US);
Mustafa Badaroglu, Kessel-Lo, BE;
Da Yang, San Diego, CA (US);
Periannan Chidambaram, San Diego, CA (US);
QUALCOMM Incorporated, San Diego, CA (US);
Abstract
Standard cell circuits employing high aspect ratio voltage rails for reduced resistance are disclosed. In one aspect, a standard cell circuit is provided that employs a first high aspect ratio voltage rail configured to receive a first supply voltage. A second high aspect ratio voltage rail is employed that is disposed substantially parallel to the first high aspect ratio voltage rail. A voltage differential between the first and second high aspect ratio voltage rails is used to power a circuit device in the standard cell circuit. The first and second high aspect ratio voltage rails each have a height-to-width ratio greater than 1.0. The height of each respective first and second high aspect ratio voltage rail is greater than each respective width. Employing the first and second high aspect ratio voltage rails allows each to have a cross-sectional area that limits the resistance and corresponding IR drop.