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For the Inventor, By the Inventor

Austin, TX, United States of America

Jeffrey R LaRoche

USPTO Granted Patents = 26 

 

Average Co-Inventor Count = 3.0

ph-index = 7

Forward Citations = 151(Granted Patents)


Location History:

  • Tewksbury, MA (US) (2009 - 2011)
  • Andover, MA (US) (2020)
  • Lowell, MA (US) (2010 - 2023)
  • Austin, TX (US) (2016 - 2023)

Company Filing History:

goldMedal26 out of 8,191 
 
Raytheon Company
 patents

Years Active: 2009-2025

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26 patents (USPTO):Explore Patents
1. 12334906 - Multi-layer resonator assembly and method for fabricating same (2025-06-17),
2. 11784248 - Group III-V semiconductor structures having crystalline regrowth layers and methods for forming such structures (2023-10-10),
3. 11710708 - On-chip EMF isolation of an integrated circuit coupled with photoconductive semiconductor switch under an on-chip faraday cage (2023-07-25),
4. 11581448 - Photoconductive semiconductor switch laterally fabricated alongside GaN on Si field effect transistors (2023-02-14),
5. 11515410 - Group III-V semiconductor structures having crystalline regrowth layers and methods for forming such structures (2022-11-29),
6. 11476154 - Field effect transistor having improved gate structures (2022-10-18),
7. 11239326 - Electrode structure for field effect transistor (2022-02-01),
8. 11205953 - Heterogeneously integrated power converter assembly (2021-12-21),
9. 11177216 - Nitride structures having low capacitance gate contacts integrated with copper damascene structures (2021-11-16),
10. 10566896 - Heterogeneously integrated power converter assembly (2020-02-18),
11. 10566428 - Method for forming gate structures for group III-V field effect transistors (2020-02-18),
12. 10340812 - Flexible power converter architecture based on interposer and modular electronic units (2019-07-02),
13. 10224285 - Nitride structure having gold-free contact and methods for forming such structures (2019-03-05),
14. 10096550 - Nitride structure having gold-free contact and methods for forming such structures (2018-10-09),
15. 9761445 - Methods and structures for forming microstrip transmission lines on thin silicon carbide on insulator (SICOI) wafers (2017-09-12),

Title: Innovations by Jeffrey R. LaRoche: A Pioneer in Semiconductor Technology

Introduction

Jeffrey R. LaRoche, an inventive mind based in Austin, TX, is known for his significant contributions to the field of semiconductor technology. With an impressive portfolio of 25 patents, LaRoche has played a critical role in advancing innovations that benefit various sectors, particularly in integration circuits and group III-V semiconductor structures.

Latest Patents

Two of LaRoche's latest patents highlight his innovative approach to semiconductor design. The first patent focuses on Group III-V semiconductor structures that incorporate crystalline regrowth layers. This semiconductor device consists of source and drain recess regions that extend through a barrier layer into a channel layer. A regrown, doped Group III-V ohmic contact layer is placed in direct contact with these recess regions, facilitating enhanced performance. Furthermore, the design features a dielectric structure that extends continuously, ensuring seamless integration over the device.

The second patent showcases an on-chip EMF isolation integrated circuit that leverages a photoconductive semiconductor switch under an EMF shield. This comprehensive structure includes a gallium nitride layer and a transistor, all encapsulated in a protective EMF shield. A signal line penetrates the shield, connecting with the photoconductive semiconductor switch, demonstrating LaRoche's ability to merge complex components into efficient designs.

Career Highlights

LaRoche's innovative journey is anchored at Raytheon Company, where he has been instrumental in developing cutting-edge semiconductor technologies. His expertise is evident in his patents, which are a testament to his commitment to pushing the boundaries of engineering in the semiconductor industry.

Collaborations

Throughout his career, LaRoche has collaborated with notable peers such as Thomas E. Kazior and Kelly P. Ip. These collaborations reflect a synergy of talent that has driven innovation within Raytheon and beyond, resulting in successful outcomes in their projects.

Conclusion

Jeffrey R. LaRoche stands out as a leader in semiconductor innovation, with a robust record of patents that impact the technological landscape. His work not only enhances the capabilities of integrated circuits but also demonstrates the collaborative spirit of innovation in the tech industry. As developments continue, LaRoche's legacy of inventiveness and collaboration will undoubtedly inspire future advancements in semiconductor technology.

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