The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 29, 2022
Filed:
Oct. 30, 2020
Raytheon Company, Waltham, MA (US);
Jeffrey R. LaRoche, Austin, TX (US);
Kelly P. Ip, Lowell, MA (US);
Thomas E. Kazior, Sudbury, MA (US);
Eduardo M. Chumbes, Andover, MA (US);
Raytheon Company, Waltham, MA (US);
Abstract
A Group III-V semiconductor structure having a semiconductor device. The semiconductor device has a source and drain recess regions extending through a barrier layer and into a channel layer. A regrown, doped Group III-V ohmic contact layer is disposed on and in direct contact with the source and drain recess regions. A gate electrode is disposed in a gap in the regrown, doped Group III-V ohmic contact layer and on the barrier layer A dielectric structure is disposed over the ohmic contact layer and over the barrier layer and extending continuously from a region over the source recess region to one side of the stem to portion and then extending continuously from an opposite side of the stem portion to a region over the drain recess region, a portion of the dielectric structure being in contact with the stem portion and the barrier layer.