The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 14, 2023
Filed:
Apr. 01, 2021
Applicant:
Raytheon Company, Waltham, MA (US);
Inventors:
Matthew DeJarld, Wakefield, MA (US);
Jeffrey R. LaRoche, Lowell, MA (US);
Clay T. Long, Medford, MA (US);
Lovelace Soirez, Andover, MA (US);
Assignee:
Raytheon Company, Waltham, MA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/103 (2006.01); H01L 31/02 (2006.01); H01L 31/0304 (2006.01); H01L 31/09 (2006.01);
U.S. Cl.
CPC ...
H01L 31/1035 (2013.01); H01L 31/02019 (2013.01);
Abstract
An integrated circuit structure comprising a substrate having an upper surface; a gallium nitride layer disposed on the upper surface of the substrate; and a photoconductive semiconductor switch laterally disposed alongside a transistor on the gallium nitride layer integrated into the integrated circuit structure wherein a regrown gallium nitride material is disposed on the photoconductive semiconductor switch and operatively coupled with the wafer.