The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 12, 2017

Filed:

Mar. 28, 2016
Applicant:

Raytheon Company, Waltham, MA (US);

Inventors:

Jeffrey R. LaRoche, Austin, TX (US);

Kelly P. Ip, Lowell, MA (US);

Thomas E. Kazior, Sudbury, MA (US);

Assignee:

Raytheon Company, Waltham, MA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/20 (2006.01); H01L 21/02 (2006.01); H01L 21/762 (2006.01); H01L 23/66 (2006.01); H01L 21/683 (2006.01); H01L 21/8258 (2006.01); H01P 11/00 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0254 (2013.01); H01L 21/6835 (2013.01); H01L 21/76251 (2013.01); H01L 23/66 (2013.01); H01L 29/2003 (2013.01); H01L 21/8258 (2013.01); H01L 2221/68327 (2013.01); H01L 2224/32145 (2013.01); H01L 2924/0002 (2013.01); H01P 11/003 (2013.01);
Abstract

A method for providing a semiconductor structure includes: providing a structure having: layer comprising silicon, such as a layer of silicon or silicon carbide; a bonding structure; and silicon layer, the bonding structure being disposed between the layer comprising silicon and the silicon layer, the silicon layer being thicker than the layer comprising silicon; and, a Group III-V layer disposed on an upper surface of the layer comprising silicon; forming a Group III-V device in the III-V layer and a strip conductor connected to the device; removing silicon layer and the bonding structure to expose a bottom surface of layer comprising silicon; and forming a ground plane conductor on the exposed bottom surface of the layer comprising silicon to provide, with the strip conductor and the ground plane conductor, a microstrip transmission line.


Find Patent Forward Citations

Loading…