The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 18, 2022
Filed:
Sep. 26, 2019
Applicant:
Raytheon Company, Waltham, MA (US);
Inventors:
Jeffrey R. LaRoche, Austin, TX (US);
John P. Bettencourt, Boxford, MA (US);
Paul J. Duval, Lexington, MA (US);
Kelly P. Ip, Lowell, MA (US);
Assignee:
Raytheon Company, Waltham, MA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76811 (2013.01); H01L 21/7682 (2013.01); H01L 21/76831 (2013.01); H01L 23/53295 (2013.01);
Abstract
A field effect transistor, comprising a gate contact and gate metal forming a vertical structure, such vertical structure having sides and a top surrounded by an air gap formed between a source electrode and a drain electrode of the field effect transistor.