Location History:
- San Jose, CA (US) (2016 - 2018)
- Lake Oswego, OR (US) (2017 - 2021)
Company Filing History:
Years Active: 2016-2021
Title: Jason Daejin Park: Innovator in Chemical Vapor Deposition Technologies
Introduction
Jason Daejin Park is a prominent inventor based in Lake Oswego, OR (US). He has made significant contributions to the field of chemical vapor deposition, holding a total of 7 patents. His innovative approaches have advanced the technology used in semiconductor manufacturing and materials science.
Latest Patents
Among his latest patents, one notable invention is the method for gap fill using carbon-based films. This patent describes techniques for filling gaps on substrates using high-density plasma chemical vapor deposition (HDP CVD). The methods involve depositing carbon-containing films, such as amorphous carbon and amorphous carbide, into gaps, utilizing high hydrogen-content process gases for effective bottom-up fill. Another significant patent focuses on the selective deposition of silicon nitride (SiN) on horizontal surfaces. This invention provides methods and apparatuses for selectively depositing SiN via HDP CVD to create SiN pads on exposed flat surfaces in a 3D NAND staircase structure.
Career Highlights
Jason has worked with leading companies in the semiconductor industry, including Lam Research Corporation and Novellus Systems Incorporated. His experience in these organizations has allowed him to refine his expertise in chemical vapor deposition technologies and contribute to groundbreaking advancements in the field.
Collaborations
Throughout his career, Jason has collaborated with notable professionals, including Bart Jan Van Schravendijk and Wei Tang. These collaborations have further enriched his work and expanded the impact of his inventions.
Conclusion
Jason Daejin Park is a distinguished inventor whose work in chemical vapor deposition has led to significant advancements in semiconductor technology. His innovative patents and collaborations reflect his commitment to pushing the boundaries of materials science.