The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 02, 2016
Filed:
Jun. 12, 2015
Applicant:
Lam Research Corporation, Fremont, CA (US);
Inventors:
Wei Tang, Fremont, CA (US);
Jason Daejin Park, San Jose, CA (US);
Bart Van Schravendijk, Sunnyvale, CA (US);
Kaihan Ashtiani, Cupertino, CA (US);
Assignee:
LAM RESEARCH CORPORATION, Fremont, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/76 (2006.01); H01L 21/762 (2006.01); H01L 21/02 (2006.01); H01L 21/324 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76205 (2013.01); H01L 21/0228 (2013.01); H01L 21/02164 (2013.01); H01L 21/02271 (2013.01); H01L 21/324 (2013.01); H01L 21/76224 (2013.01); H01L 29/0649 (2013.01);
Abstract
A method for filling a trench in a substrate includes partially filling the trench with a first silicon dioxide layer. An amorphous silicon layer is deposited on the silicon dioxide layer. The trench is filled with a second silicon dioxide layer. An oxidation treatment is performed on the substrate to oxidize the amorphous silicon layer.
Quick Actions:
Tang, Wei. (2016). Systems and methods for eliminating seams in atomic layer deposition of silicon dioxide film in gap fill applications (U.S. Patent No. 9406544). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9406544
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile