Lam Research Corporation

Novellus Systems Incorporated

Jason Daejin Park

Bart Jan Van Schravendijk

Kaihan Abidi Ashtiani

Wei Tang

Adrien Lavoie

Michal Danek

Shankar Swaminathan

Patrick A Van Cleemput

Purushottam Kumar

Sesha Varadarajan

Awnish Gupta

Bart K Van Schravendijk

Lin Cui

Hsiang-yun Lee

Naohiro Shoda

Shu Tsai Wang

Provided herein are methods of filling gaps using high density plasma chemical vapor deposition (HDP CVD). According to various implementations, carbon-containing films such as amorphous carbon and amorphous carbide films are deposited by HDP CVD into gaps on substrates to fill the gaps. The methods may involve using high hydrogen-content process gasses during HDP CVD deposition to provide bottom-up fill. Also provided are related apparatus.

Gap fill using carbon-based films

Methods and apparatuses for selectively depositing silicon nitride (SiN) via high-density plasma chemical vapor deposition (HDP CVD) to form a SiN pad on an exposed flat surface of a nitride layer in a 3D NAND staircase structure with alternating oxide and nitride layers are provided. In some embodiments, selective etching is performed to remove undesirable buildup of SiN on sidewalls of the oxide layers of the staircase structure. Nitride layers of the staircase structure are replaced with tungsten (W) to form tungsten wordlines, while the SiN pads are replaced with tungsten to from landing pads, which prevent punchthrough of the tungsten wordlines on the staircase structure by interconnects extending thereto.

Selective deposition of SiN on horizontal surfaces

A method for processing a substrate to create an air gap includes a) providing a substrate including a first trench and a second trench; b) depositing a conformal layer on the substrate; c) performing sputtering to at least partially pinch off an upper portion of the first trench and the second trench at a location spaced from upper openings of the first trench and the second trench; and d) performing sputtering/deposition to seal first and second airgaps in the first trench and the second trench.

Systems and methods for creating airgap seals using atomic layer deposition and high density plasma chemical vapor deposition

Methods and apparatuses for conditioning chambers using a two-stage process involving a low bias and a high bias stage are provided. Methods also involve clamping a protective electrostatic chuck cover to a pedestal by applying a bias to the electrostatic chuck during the high bias stage while cooling the protective electrostatic chuck cover, such as by flowing helium to the backside of the cover.

Eliminating first wafer metal contamination effect in high density plasma chemical vapor deposition systems

A method for densifying a dielectric film on a substrate includes arranging a substrate including a dielectric film on a substrate support in a substrate processing chamber; supplying a gas mixture including helium and oxygen to the substrate processing chamber; controlling pressure in the substrate processing chamber to a pressure greater than or equal to a predetermined pressure; supplying a first power level at a first frequency to a coil to create plasma in the substrate processing chamber. The coil is arranged around an outer surface of the substrate processing chamber. The method includes densifying the dielectric film for a predetermined period. The pressure and the first power level are selected to prevent sputtering of the dielectric film during densification of the dielectric film.

Densification of dielectric film using inductively coupled high density plasma

A method for filling a trench in a substrate includes partially filling the trench with a first silicon dioxide layer. An amorphous silicon layer is deposited on the silicon dioxide layer. The trench is filled with a second silicon dioxide layer. An oxidation treatment is performed on the substrate to oxidize the amorphous silicon layer.

Systems and methods for eliminating seams in atomic layer deposition of silicon dioxide film in gap fill applications

A method and apparatus for conformally depositing a dielectric oxide in high aspect ratio gaps in a substrate is disclosed. A substrate is provided with one or more gaps into a reaction chamber where each gap has a depth to width aspect ratio of greater than about 5:1. A first dielectric oxide layer is deposited in the one or more gaps by CFD. A portion of the first dielectric oxide layer is etched using a plasma etch, where etching the portion of the first dielectric oxide layer occurs at a faster rate near a top surface than near a bottom surface of each gap so that the first dielectric oxide layer has a tapered profile from the top surface to the bottom surface of each gap. A second dielectric oxide layer is deposited in the one or more gaps over the first dielectric oxide layer via CFD.

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Lake Oswego, OR, United States of America

Jason Daejin Park