The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 29, 2021
Filed:
Nov. 16, 2018
Applicant:
Lam Research Corporation, Fremont, CA (US);
Inventors:
Wei Tang, Fremont, CA (US);
Jason Daejin Park, Lake Oswego, OR (US);
Bart J. van Schravendijk, Palo Alto, CA (US);
Shu Tsai Wang, Dublin, CA (US);
Kaihan Abidi Ashtiani, Cupertino, CA (US);
Assignee:
Lam Research Corporation, Fremont, CA (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/768 (2006.01); H01L 21/762 (2006.01); C23C 16/04 (2006.01); C23C 16/26 (2006.01); C23C 16/32 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02274 (2013.01); C23C 16/045 (2013.01); C23C 16/26 (2013.01); C23C 16/325 (2013.01); H01L 21/02115 (2013.01); H01L 21/02167 (2013.01); H01L 21/02211 (2013.01); H01L 21/76224 (2013.01); H01L 21/76837 (2013.01);
Abstract
Provided herein are methods of filling gaps using high density plasma chemical vapor deposition (HDP CVD). According to various implementations, carbon-containing films such as amorphous carbon and amorphous carbide films are deposited by HDP CVD into gaps on substrates to fill the gaps. The methods may involve using high hydrogen-content process gasses during HDP CVD deposition to provide bottom-up fill. Also provided are related apparatus.