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For the Inventor, By the Inventor

Austin, TX, United States of America

James R Pfiester

USPTO Granted Patents = 67

Average Co-Inventor Count = 1.5

ph-index = 28

Forward Citations = 2,140(Granted Patents)


Inventors with similar research interests:


Company Filing History:

goldMedal67 out of 20,290 
 
Motorola Corporation
 patents

Years Active: 1981-1997

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67 patents (USPTO):Explore Patents
1. 5616948 - Semiconductor device having electrically coupled transistors with a (1997-04-01),
2. 5536962 - Semiconductor device having a buried channel transistor (1996-07-16),
3. 5473185 - Static-random-access memory cell with channel stops having differing (1995-12-05),
4. 5459688 - Semiconductor memory cell and fabrication process (1995-10-17),
5. 5426315 - Thin-film transistor having an inlaid thin-film channel region (1995-06-20),
6. 5422300 - Method for forming electrical isolation in an integrated circuit (1995-06-06),
7. 5413948 - Method for forming a dual transistor structure (1995-05-09),
8. 5407847 - Method for fabricating a semiconductor device having a shallow doped (1995-04-18),
9. 5405806 - Method for forming a metal silicide interconnect in an integrated circuit (1995-04-11),
10. 5393689 - Process for forming a static-random-access memory cell (1995-02-28),
11. 5373170 - Semiconductor memory device having a compact symmetrical layout (1994-12-13),
12. 5371035 - Method for forming electrical isolation in an integrated circuit device (1994-12-06),
13. 5371026 - Method for fabricating paired MOS transistors having a current-gain (1994-12-06),
14. 5369052 - Method of forming dual field oxide isolation (1994-11-29),
15. 5358890 - Process for fabricating isolation regions in a semiconductor device (1994-10-25),

Title: Innovator Spotlight: James R. Pfiester

Introduction: James R. Pfiester is a prolific inventor based in Austin, TX, whose work in semiconductor technology has led to the issuance of 67 patents. His innovations are recognized for enhancing the performance and stability of semiconductor devices, making significant contributions to the industry.

Latest Patents: Among his latest patents, one noteworthy invention is a semiconductor device featuring electrically coupled transistors. This device demonstrates a unique design where a pass transistor is electrically linked to a driver transistor through a shared drain region. The configuration improves current gain in the driver transistor, which, when utilized in an SRAM memory cell, enhances cell stability against electrical disturbances.

Another significant patent involves a buried channel transistor configuration, where two MOS transistors are coupled to achieve higher carrier mobility. This design results in improved current gain for the second transistor as it is fabricated as a buried channel device, showcasing the advances in semiconductor design that enhance overall device performance.

Career Highlights: James R. Pfiester has dedicated a significant portion of his career to Motorola Corporation, where he has worked diligently on developing cutting-edge semiconductor solutions. His expertise and innovative mindset have solidified his reputation as a leading figure in the field.

Collaborations: Throughout his career, Pfiester has collaborated with renowned colleagues, including James D. Hayden and Frank K. Baker. These partnerships have often resulted in groundbreaking technologies and have contributed to the wealth of knowledge and expertise within the semiconductor sector.

Conclusion: James R. Pfiester's work continues to influence the semiconductor industry through his numerous patents and innovative designs. His contributions not only reflect his individual talent but also highlight the importance of collaboration in fostering technological advancements. As the field evolves, Pfiester remains a pivotal figure, driving forward the boundaries of semiconductor technology.

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