James R Pfiester

This inventor holds 67 USPTO granted patents, primarily in Semiconductor Devices (CPC class 437 ). Top assignee: Motorola Corporation. Active years: 1981-1997.

IDiyas Innovation Intelligence. (2026). Inventor Profile: James R Pfiester. Retrieved from https://idiyas.com/inventor/james-r-pfiester

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 67

% Patents Active = 100.0

Average Co-Inventor Count = 1.5

ph-index = 28

Forward Citations = 2,145(Granted Patents)

Forward Citations (Not Self Cited) = 2,102(Dec 10, 2025)

Inventors with similar research interests:

Company Filing History:

67 out of 20,290

Motorola Corporation

patents

Years Active: 1981-1997

Loading Chart...

Areas of Expertise:

Transistor

Memory Cell

Fabrication Process

CMOS

Thin-Film

Electrical Isolation

Doped Region

Silicided Regions

Static-Random-Access Memory

Dynamic-Random-Access Memory

Field Effect Transistor

Isolation Regions

67 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 5616948 - Semiconductor device having electrically coupled transistors with a (1997-04-01),

2. 5536962 - Semiconductor device having a buried channel transistor (1996-07-16),

3. 5473185 - Static-random-access memory cell with channel stops having differing (1995-12-05),

4. 5459688 - Semiconductor memory cell and fabrication process (1995-10-17),

5. 5426315 - Thin-film transistor having an inlaid thin-film channel region (1995-06-20),

6. 5422300 - Method for forming electrical isolation in an integrated circuit (1995-06-06),

7. 5413948 - Method for forming a dual transistor structure (1995-05-09),

8. 5407847 - Method for fabricating a semiconductor device having a shallow doped (1995-04-18),

9. 5405806 - Method for forming a metal silicide interconnect in an integrated circuit (1995-04-11),

10. 5393689 - Process for forming a static-random-access memory cell (1995-02-28),

11. 5373170 - Semiconductor memory device having a compact symmetrical layout (1994-12-13),

12. 5371035 - Method for forming electrical isolation in an integrated circuit device (1994-12-06),

13. 5371026 - Method for fabricating paired MOS transistors having a current-gain (1994-12-06),

14. 5369052 - Method of forming dual field oxide isolation (1994-11-29),

15. 5358890 - Process for fabricating isolation regions in a semiconductor device (1994-10-25),

Title: Innovator Spotlight: James R. Pfiester

Introduction: James R. Pfiester is a prolific inventor based in Austin, TX, whose work in semiconductor technology has led to the issuance of 67 patents. His innovations are recognized for enhancing the performance and stability of semiconductor devices, making significant contributions to the industry.

Latest Patents: Among his latest patents, one noteworthy invention is a semiconductor device featuring electrically coupled transistors. This device demonstrates a unique design where a pass transistor is electrically linked to a driver transistor through a shared drain region. The configuration improves current gain in the driver transistor, which, when utilized in an SRAM memory cell, enhances cell stability against electrical disturbances.

Another significant patent involves a buried channel transistor configuration, where two MOS transistors are coupled to achieve higher carrier mobility. This design results in improved current gain for the second transistor as it is fabricated as a buried channel device, showcasing the advances in semiconductor design that enhance overall device performance.

Career Highlights: James R. Pfiester has dedicated a significant portion of his career to Motorola Corporation, where he has worked diligently on developing cutting-edge semiconductor solutions. His expertise and innovative mindset have solidified his reputation as a leading figure in the field.

Collaborations: Throughout his career, Pfiester has collaborated with renowned colleagues, including James D. Hayden and Frank K. Baker. These partnerships have often resulted in groundbreaking technologies and have contributed to the wealth of knowledge and expertise within the semiconductor sector.

Conclusion: James R. Pfiester's work continues to influence the semiconductor industry through his numerous patents and innovative designs. His contributions not only reflect his individual talent but also highlight the importance of collaboration in fostering technological advancements. As the field evolves, Pfiester remains a pivotal figure, driving forward the boundaries of semiconductor technology.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]