The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 17, 1995
Filed:
May. 17, 1994
James R Pfiester, Austin, TX (US);
James D Hayden, Austin, TX (US);
Motorola Inc., Schumburg, IL (US);
Abstract
A semiconductor memory cell (10) includes first and second cross-coupled driver transistors (13, 19) each having a source-drain region and a channel region formed in a first thin-film layer (36, 36'). First and second parallel opposed wordlines (20, 22) overlie a single-crystal semiconductor substrate (12) and the channel region (46) of each driver transistor overlies a portion of an adjacent wordline. A portion of the thin-film layer (36, 36') makes contact to the single-crystal semiconductor substrate (12) adjacent to the opposite wordline. The channel and source-drain regions of first and second load transistors (15, 21) are formed in a second thin-film layer (64) which overlies the driver transistors (13, 19). The load transistors (15, 21) are cross-coupled to the driver transistors (13, 19) through common nodes (31, 33).