The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 06, 1995
Filed:
Aug. 17, 1994
James R Pfiester, Austin, TX (US);
Prashant Kenkare, Austin, TX (US);
Kent J Cooper, Austin, TX (US);
Bich-Yen Nguyen, Austin, TX (US);
Motorola Inc., Schaumburg, IL (US);
Abstract
Defect-free field oxide isolation is achieved using a laminated layer (14) of thermal silicon dioxide and chemically vapor deposited silicon dioxide underneath a silicon nitride field oxidation mask (18). The laminated layer (14) of silicon dioxide is formed on a silicon substrate (12) and a layer of silicon nitride is then deposited over it. The silicon nitride is subsequently patterned to form a field oxidation mask (18) which defines isolation regions (22) within the silicon substrate (12). Field oxide (34) is grown in the isolation regions (22) of the silicon substrate (12) and the field oxidation mask (18) is subsequently removed.