The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 25, 1994
Filed:
Apr. 19, 1993
Richard D Sivan, Austin, TX (US);
James R Pfiester, Austin, TX (US);
Motorola Inc., Schaumburg, IL (US);
Abstract
A process for forming isolation regions (20) having a self-aligned channel-stop (22) formed by implanting dopant atoms (24) through the isolation regions (22). An isolation mask (15) is formed over an active region (16) in a semiconductor substrate (10). The isolation mask can be constructed from a variety of materials including silicon nitride, silicon oxynitride, boron nitride, polysilicon, and germanium oxide. Thick isolation regions (20) are formed on either side of the isolation mask (15) and an ion implant process is carried out to form doped regions (22) in the substrate (10) immediately below the isolation regions (20). The isolation mask (15) prevents dopant atoms (24) from entering the active region (16) of the substrate (10).