Hudson, NY, United States of America

James Kuss


Average Co-Inventor Count = 3.1

ph-index = 4

Forward Citations = 46(Granted Patents)


Location History:

  • Claverack, NY (US) (2006)
  • Hudson, NY (US) (2016 - 2018)
  • Guilderland, NY (US) (2018 - 2019)

Company Filing History:


Years Active: 2006-2019

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8 patents (USPTO):

Title: The Innovative Contributions of James Kuss

Introduction

James Kuss is a notable inventor based in Hudson, NY, with a remarkable portfolio of eight patents. His work primarily focuses on advancements in semiconductor technology, particularly in the formation of silicon germanium and silicon fins.

Latest Patents

One of Kuss's latest patents is a method of forming silicon germanium and silicon fins on oxide from bulk wafer. This innovative method involves filling areas between fin structures with a dielectric fill, selectively etching the SiGe layer, and thermally oxidizing the SiGe layer to create fins on different dielectric materials. Another significant patent is related to a semiconductor device that includes groups of nanowires made from different semiconductor materials. This method enhances the performance and efficiency of semiconductor devices by forming a dielectric layer that defines groups of nanowires.

Career Highlights

Throughout his career, James Kuss has worked with prominent companies in the technology sector, including IBM and STMicroelectronics. His contributions to these organizations have significantly advanced the field of semiconductor technology.

Collaborations

Kuss has collaborated with esteemed colleagues such as Nicolas J. Loubet and Hong He, further enriching his innovative endeavors.

Conclusion

James Kuss's contributions to semiconductor technology through his patents and collaborations highlight his significant impact on the industry. His innovative methods continue to shape the future of electronic devices.

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