The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 20, 2018

Filed:

Feb. 18, 2014
Applicants:

Stmicroelectronics, Inc., Coppell, TX (US);

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Nicolas Loubet, Guilderland, NY (US);

James Kuss, Hudson, NY (US);

Assignees:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/8238 (2006.01); H01L 27/12 (2006.01); H01L 27/092 (2006.01); H01L 21/84 (2006.01); H01L 29/16 (2006.01); H01L 29/161 (2006.01); H01L 29/06 (2006.01); H01L 29/786 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1211 (2013.01); H01L 21/823807 (2013.01); H01L 21/823821 (2013.01); H01L 21/84 (2013.01); H01L 21/845 (2013.01); H01L 27/0922 (2013.01); H01L 27/0924 (2013.01); H01L 27/1203 (2013.01); H01L 29/0673 (2013.01); H01L 29/16 (2013.01); H01L 29/161 (2013.01); H01L 29/78696 (2013.01); H01L 21/0243 (2013.01); H01L 21/02532 (2013.01); H01L 21/02603 (2013.01);
Abstract

A method for making a semiconductor device may include forming, above a substrate, a plurality of fins, forming a first semiconductor material on sides of a first group of the fins, and forming a second semiconductor material on sides of a second group of the fins. The method may further include forming a dielectric layer overlying the plurality of fins to define first and second groups of nanowires within the dielectric layer, with the first group of nanowires including the first semiconductor material and the second group of nanowires including the second semiconductor material.


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Loubet, Nicolas. (2018). Semiconductor device including groups of nanowires of different semiconductor materials and related methods (U.S. Patent No. 10134759). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10134759

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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