The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 04, 2016
Filed:
Aug. 01, 2014
Stmicroelectronics, Inc., Coppell, TX (US);
International Business Machines Corporation, Armonk, NY (US);
STMicroelectronics, Inc., Coppell, TX (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A substrate layer formed of a first semiconductor material includes adjacent first and second regions. Fin structures are formed from the substrate layer in both the first and second regions. At least the side walls of the fin structures in the second region are covered with an epitaxially grown layer of second semiconductor material. A drive in process is performed to convert the fin structures in the second region from the first semiconductor material to the second semiconductor material. The first semiconductor material is, for example, silicon, and the second semiconductor material is, for example, silicon germanium or silicon carbide. The fin structures in the first region are provided for a FinFET of a first (for example, n-channel) conductivity type while the fin structures in the second region are provided for a FinFET of a second (for example, p-channel) conductivity type.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile