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For the Inventor, By the Inventor

Lake Lincolndale, NY, United States of America

James Bowler Hannon

This inventor holds 54 USPTO granted patents and 7 published patent applications and 3 EPO patents, primarily in Photovoltaic Technology (CPC class H01L). Top assignees: International Business Machines Corporation, Samsung Electronics Co., Ltd.. Active years: 2009-2023.

IDiyas Innovation Intelligence. (2026). Inventor Profile: James Bowler Hannon. Retrieved from https://idiyas.com/inventor/james-bowler-hannon

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 54 

% Patents Active = 59.3


Average Co-Inventor Count = 3.6

ph-index = 12

Forward Citations = 364(Granted Patents)

Forward Citations (Not Self Cited) = 342(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Yorktown Heights, NY (US) (2012)
  • Lincolndale, NY (US) (2014)
  • Lake Lincolndale, NY (US) (2014 - 2022)
  • Mahopac, NY (US) (2009 - 2023)

Company Filing History:

goldMedal52 out of 166,351 
 
International Business Machines Corporation
 patents
silverMedal2 out of 132,108 
 
Samsung Electronics Co., Ltd.
 patents

Years Active: 2009-2023

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Areas of Expertise:
Photovoltaic Structures
Artificial Neural Networks
Graphene Transfer
Carbon Nanotubes
Integrated Devices
Optically Programmable Chip
Thin Film Devices
Surface Force Apparatus
Doped Semiconductor
Bifunctional Monolayers
Circuit Board Integration
Height Measurement
54 patents (USPTO):Explore Patents
1. 11842771 - Cross-point array of polymer junctions with individually-programmed conductances (2023-12-12),
2. 11737373 - Silicide passivation of niobium (2023-08-22),
3. 11476238 - Dense hybrid package integration of optically programmable chip (2022-10-18),
4. 11276796 - Photovoltaic structures having multiple absorber layers separated by a diffusion barrier (2022-03-15),
5. 11227996 - Artificial neural networks (ANN) including a resistive element based on doped semiconductor elements (2022-01-18),
6. 11176995 - Cross-point array of polymer junctions with individually-programmed conductances (2021-11-16),
7. 11054320 - Surface force apparatus based on a spherical lens (2021-07-06),
8. 11043270 - SoC package with integrated ultraviolet light source (2021-06-22),
9. 11024803 - Methods for fabricating artificial neural networks (ANN) based on doped semiconductor resistive random access memory (RRAM) elements (2021-06-01),
10. 10938340 - Integrated CZT(S,Se) photovoltaic device and battery (2021-03-02),
11. 10832775 - Cross-point array of polymer junctions with individually-programmed conductances that can be reset (2020-11-10),
12. 10761089 - Bifunctional acid monolayers for the selective placement of carbon nanotubes (2020-09-01),
13. 10749050 - Thin film CZTSSe photovoltaic device (2020-08-18),
14. 10748059 - Architecture for an electrochemical artificial neural network (2020-08-18),
15. 10564056 - Surface force apparatus based on a spherical lens (2020-02-18),

Title: The Innovative Contributions of James Bowler Hannon

Introduction: James Bowler Hannon, a prolific inventor residing in Lake Lincolndale, NY, has made significant strides in the field of technology with a remarkable portfolio of 54 patents. His inventiveness spans a variety of applications, offering groundbreaking solutions particularly in the realm of memory devices and superconducting technology.

Latest Patents: Among Hannon's latest innovations is the patent for a "Cross-point array of polymer junctions with individually-programmed conductances." This programmable memory device employs a method that includes forming first metal lines on an insulating substrate, followed by polymeric resistance elements positioned atop these lines. His design enables a robust cross-point array configuration that enhances the functionality and efficiency of memory devices.

Another notable invention is the "Silicide passivation of niobium," which details a superconducting device composed of a substrate with multiple niobium leads, enhanced by a niobium silicide passivation layer. This carefully engineered structure allows for high-performance supercurrent flow while minimizing exposure to oxidizing materials.

Career Highlights: James Hannon has established himself as a vital contributor in the technological sphere by working with prestigious companies such as International Business Machines Corporation (IBM) and Samsung Electronics Co., Ltd. His innovations reflect both his technical expertise and his commitment to pushing the boundaries of current technology.

Collaborations: Throughout his career, Hannon has collaborated with esteemed colleagues including Richard Alan Haight and Ali Afzali-Ardakani. These partnerships have fostered a creative exchange of ideas, significantly influencing the technology landscape.

Conclusion: James Bowler Hannon's contributions to the field of technology are noteworthy, with a robust collection of patents that illustrate his innovative spirit. His work, particularly in memory devices and superconducting technology, showcases the importance of collaboration and the pursuit of groundbreaking solutions in modern engineering.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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