The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 01, 2021
Filed:
Feb. 28, 2019
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Ali Afzali-Ardakani, Ossining, NY (US);
Matthew Warren Copel, Yorktown Heights, NY (US);
James Bowler Hannon, Lake Lincolndale, NY (US);
Satoshi Oida, Yorktown Heights, NY (US);
Assignee:
INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01); H01L 21/385 (2006.01); H01L 21/268 (2006.01); H01L 21/263 (2006.01); H01L 21/225 (2006.01); G06N 3/04 (2006.01); G06N 3/063 (2006.01); H01L 29/36 (2006.01);
U.S. Cl.
CPC ...
H01L 45/1641 (2013.01); G06N 3/04 (2013.01); G06N 3/049 (2013.01); G06N 3/063 (2013.01); H01L 21/2255 (2013.01); H01L 21/2636 (2013.01); H01L 21/2686 (2013.01); H01L 21/385 (2013.01); H01L 29/36 (2013.01); H01L 45/08 (2013.01); H01L 45/145 (2013.01); H01L 45/1658 (2013.01);
Abstract
A method of forming a resistive random access memory (RRAM) element, the method includes forming a Silicon layer on an oxide layer, depositing a thin film dopant layer on the Silicon layer, and controlling a concentration of the dopant in the thin film dopant layer.