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For the Inventor, By the Inventor

Yorktown Heights, NY, United States of America

Satoshi Oida

USPTO Granted Patents = 18 

 

Average Co-Inventor Count = 4.3

ph-index = 6

Forward Citations = 82(Granted Patents)


Company Filing History:

goldMedal16 out of 164,108 
 
International Business Machines Corporation
 patents
silverMedal2 out of 131,214 
 
Samsung Electronics Co., Ltd.
 patents

Years Active: 2012-2022

where 'Filed Patents' based on already Granted Patents

18 patents (USPTO):
1. 11276796 - Photovoltaic structures having multiple absorber layers separated by a diffusion barrier (2022-03-15),
2. 11227996 - Artificial neural networks (ANN) including a resistive element based on doped semiconductor elements (2022-01-18),
3. 11024803 - Methods for fabricating artificial neural networks (ANN) based on doped semiconductor resistive random access memory (RRAM) elements (2021-06-01),
4. 10749050 - Thin film CZTSSe photovoltaic device (2020-08-18),
5. 10748059 - Architecture for an electrochemical artificial neural network (2020-08-18),
6. 10361331 - Photovoltaic structures having multiple absorber layers separated by a diffusion barrier (2019-07-23),
7. 10269994 - Liftoff process for exfoliation of thin film photovoltaic devices and back contact formation (2019-04-23),
8. 10256405 - Methods for fabricating artificial neural networks (ANN) based on doped semiconductor elements (2019-04-09),
9. 10008618 - Liftoff process for exfoliation of thin film photovoltaic devices and back contact formation (2018-06-26),
10. 9935214 - Liftoff process for exfoliation of thin film photovoltaic devices and back contact formation (2018-04-03),
11. 9711613 - Stacked graphene field-effect transistor (2017-07-18),
12. 9508801 - Stacked graphene field-effect transistor (2016-11-29),
13. 9472450 - Graphene cap for copper interconnect structures (2016-10-18),
14. 8969115 - Transparent conductive electrode stack containing carbon-containing material (2015-03-03),
15. 8895433 - Method of forming a graphene cap for copper interconnect structures (2014-11-25),

Title: The Innovative Journey of Satoshi Oida

Introduction: Satoshi Oida is a pioneering inventor based in Yorktown Heights, NY (US) known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Satoshi Oida holds several patents in the areas of artificial intelligence, machine learning, and quantum computing, showcasing his commitment to pushing the boundaries of technological advancement.

Career Highlights: With a career spanning over two decades, Satoshi Oida has worked with leading tech companies and research institutions, playing a key role in developing cutting-edge technologies that have revolutionized various industries.

Collaborations: Throughout his career, Satoshi Oida has collaborated with top researchers, engineers, and scientists from around the world, fostering a culture of innovation and knowledge sharing that has led to numerous breakthroughs in the tech sector.

Conclusion: Satoshi Oida's relentless pursuit of innovation and his passion for pushing the limits of technology have solidified his reputation as a visionary inventor at the forefront of the digital revolution.

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