The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 18, 2017
Filed:
Nov. 03, 2016
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Aaron D. Franklin, Croton on Hudson, NY (US);
Hiroyuki Miyazoe, White Plains, NY (US);
Satoshi Oida, Yorktown Heights, NY (US);
Joshua T. Smith, Croton on Hudson, NY (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/16 (2006.01); H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 29/423 (2006.01); H01L 21/04 (2006.01); H01L 21/768 (2006.01); H01L 29/49 (2006.01); H01L 29/45 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66045 (2013.01); H01L 21/02244 (2013.01); H01L 21/02527 (2013.01); H01L 21/042 (2013.01); H01L 21/043 (2013.01); H01L 21/044 (2013.01); H01L 21/76805 (2013.01); H01L 21/76877 (2013.01); H01L 29/1606 (2013.01); H01L 29/42392 (2013.01); H01L 29/45 (2013.01); H01L 29/4908 (2013.01); H01L 29/78684 (2013.01);
Abstract
In an aspect of the present invention, a graphene field-effect transistor (GFET) structure is formed. The GFET structure comprises a wider portion and a narrow extension portion extending from the wider portion that includes one or more graphene layers edge contacted to source and drain contacts, wherein the source and drain contacts are self-aligned to the one or more graphene layers.