The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 25, 2014

Filed:

Jan. 06, 2014
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Griselda Bonilla, Fishkill, NY (US);

Christos D. Dimitrakopoulos, Baldwin Place, NY (US);

Alfred Grill, White Plains, NY (US);

James B. Hannon, Lake Lincolndale, NY (US);

Qinghuang Lin, Yorktown Heights, NY (US);

Deborah A. Neumayer, Danbury, CT (US);

Satoshi Oida, Yorktown Heights, NY (US);

John A. Ott, Greenwood Lake, NY (US);

Dirk Pfeiffer, Croton on Hudson, NY (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01); H01L 21/768 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76877 (2013.01); H01L 21/76852 (2013.01); H01L 21/76835 (2013.01); H01L 21/76846 (2013.01); H01L 21/76849 (2013.01); H01L 23/53238 (2013.01);
Abstract

Interconnect structures including a graphene cap located on exposed surfaces of a copper structure are provided. In some embodiments, the graphene cap is located only atop the uppermost surface of the copper structure, while in other embodiments the graphene cap is located along vertical sidewalls and atop the uppermost surface of the copper structure. The copper structure is located within a dielectric material.


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