The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 18, 2022
Filed:
Feb. 28, 2019
Artificial neural networks (ann) including a resistive element based on doped semiconductor elements
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Ali Afzali-Ardakani, Ossining, NY (US);
Matthew Warren Copel, Yorktown Heights, NY (US);
James Bowler Hannon, Lake Lincolndale, NY (US);
Satoshi Oida, Yorktown Heights, NY (US);
Assignee:
INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01); G06N 3/04 (2006.01); G06N 3/063 (2006.01); H01L 21/385 (2006.01); H01L 27/10 (2006.01); H01L 27/24 (2006.01); H01L 21/225 (2006.01); H01L 29/36 (2006.01); H01L 21/263 (2006.01); H01L 21/268 (2006.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H01L 45/1641 (2013.01); G06N 3/04 (2013.01); G06N 3/049 (2013.01); G06N 3/063 (2013.01); H01L 21/2255 (2013.01); H01L 21/2636 (2013.01); H01L 21/2686 (2013.01); H01L 21/385 (2013.01); H01L 27/10 (2013.01); H01L 27/2463 (2013.01); H01L 28/20 (2013.01); H01L 29/36 (2013.01); H01L 45/08 (2013.01); H01L 45/145 (2013.01); H01L 45/1658 (2013.01);
Abstract
A resistive element in an artificial neural network, the resistive element includes a Silicon-on-insulator (SOI) substrate, and a Silicon layer formed on the Silicon-on-insulator substrate. The Silicon layer includes dopants derived from a thin film dopant layer, and the thin film dopant layer includes a programmed amount of dopant including at least one of Boron and Phosphorus.