The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 12, 2023

Filed:

Oct. 25, 2021
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Ali Afzali-Ardakani, Ossining, NY (US);

James B. Hannon, Mahopac, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 13/00 (2006.01); H10K 10/50 (2023.01); H10K 19/00 (2023.01); H10K 71/20 (2023.01); H10K 85/60 (2023.01); H10K 85/10 (2023.01);
U.S. Cl.
CPC ...
G11C 13/0069 (2013.01); G11C 13/004 (2013.01); G11C 13/0016 (2013.01); H10K 10/50 (2023.02); H10K 19/202 (2023.02); H10K 71/211 (2023.02); H10K 85/111 (2023.02); H10K 85/60 (2023.02);
Abstract

Programmable memory devices having a cross-point array of polymer junctions with individually-programmed conductances are provided. In one aspect, a method of forming a memory device includes: forming first metal lines on an insulating substrate; forming polymeric resistance elements on the first metal lines; and forming second metal lines over the polymeric resistance elements with a single one of the polymeric resistance elements present at each intersection of the first/second metal lines forming a cross-point array. A memory device and a method of operating a memory device are also provided.


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