International Business Machines Corporation

Samsung Electronics Co., Ltd.

James Bowler Hannon

Richard Alan Haight

Ali Afzali-Ardakani

Satoshi Oida

George Stojan Tulevski

Rudolf M Tromp

Arthur Wood Ellis

Teodor Krassimirov Todorov

Dirk Pfeiffer

Christos Dimitrios Dimitrakopoulos

Matthew Warren Copel

Devendra K Sadana

Teresita Ordonez Graham

Priscilla D Antunez

Alfred Grill

Qinghuang Lin

Griselda Bonilla

Talia S Gershon

Deborah A Neumayer

John Albrecht Ott

Phaedon Avouris

Aaron Daniel Franklin

Zhihong Chen

Christian Klinke

Stephen W Bedell

Ning Li

Keith E Fogel

Shu-Jen Han

Jeehwan Kim

Tze-Chiang Chen

Frank Robert Libsch

John Jacob Yurkas

Hongsik Park

Katherine Lynn Saenger

Wilfried Haensch

Fenton Read McFeely

Cherie Renee Kagan

Adam M Pyzyna

Alina Afzali-Ardakani

Ali Afazali-Ardakani

Programmable memory devices having a cross-point array of polymer junctions with individually-programmed conductances are provided. In one aspect, a method of forming a memory device includes: forming first metal lines on an insulating substrate; forming polymeric resistance elements on the first metal lines; and forming second metal lines over the polymeric resistance elements with a single one of the polymeric resistance elements present at each intersection of the first/second metal lines forming a cross-point array. A memory device and a method of operating a memory device are also provided.

Cross-point array of polymer junctions with individually-programmed conductances

A superconducting device which includes a substrate, multiple niobium leads formed on the substrate, a niobium silicide (NbSi) passivation layer formed on a surface of at least one of the multiple niobium leads, and an aluminum lead formed directly on at least a portion of the NbSipassivation layer such that an interface therebetween is substantially free of oxygen and oxidized material, where the multiple niobium leads and the aluminum lead are constructed to carry a supercurrent while in use.

Silicide passivation of niobium

An interconnect for a semiconductor device includes: a carrier; a UV programmable chip mounted on the carrier using a first array of solder connections; a UV light source mounted on the carrier using a second array of solder connections, the UV light source being in optical communication with the UV programmable chip; and a plurality of transmission lines extending on or through the carrier and providing electrical communication between the UV programmable chip and the UV light source.

Dense hybrid package integration of optically programmable chip

Photovoltaic structures having multiple absorber layers separated by a diffusion barrier are provided. In one aspect, a method of forming an absorber on a substrate includes: depositing a first layer of light absorbing material on the substrate; depositing a diffusion barrier; depositing a second layer of light absorbing material on the diffusion barrier, wherein the first layer of light absorbing material has a different band gap from the second layer of light absorbing material; and annealing the absorber, wherein the diffusion barrier prevents diffusion of elements between the first layer of light absorbing material and the second layer of light absorbing material during the annealing. A solar cell and method for formation thereof are also provided.

Photovoltaic structures having multiple absorber layers separated by a diffusion barrier

A resistive element in an artificial neural network, the resistive element includes a Silicon-on-insulator (SOI) substrate, and a Silicon layer formed on the Silicon-on-insulator substrate. The Silicon layer includes dopants derived from a thin film dopant layer, and the thin film dopant layer includes a programmed amount of dopant including at least one of Boron and Phosphorus.

Artificial neural networks (ANN) including a resistive element based on doped semiconductor elements

A force detector and method for using the same include a lens and a cantilever below the lens. A laser above the lens is configured to emit a beam of light that reflects from a surface of the lens and the cantilever. A processor is configured to determine a force between the lens and the cantilever based on interference between the light reflected from the surface and the light reflected from the cantilever.

Surface force apparatus based on a spherical lens

Programmable devices and methods for fabricating the programmable devices are described. In an example, a method for fabricating a programmable device can include bonding a UV light source to a computer chip by flip-chip mounting the UV light source to the computer chip. The UV light source can be configured to emit UV light towards a UV erasable area of the computer chip to perform UV erasing on the computer chip. The method can further include bonding a carrier to the computer chip by flip chip mounting the computer chip to the carrier using a second array of bond pads.

SoC package with integrated ultraviolet light source

A method of forming a resistive random access memory (RRAM) element, the method includes forming a Silicon layer on an oxide layer, depositing a thin film dopant layer on the Silicon layer, and controlling a concentration of the dopant in the thin film dopant layer.

Methods for fabricating artificial neural networks (ANN) based on doped semiconductor resistive random access memory (RRAM) elements

An integrated kesterite (e.g., CZT(S,Se)) photovoltaic device and battery is provided. In one aspect, a method of forming an integrated photovoltaic device and battery includes: forming a photovoltaic device having a substrate, an electrically conductive layer, an absorber layer, a buffer layer, a transparent front contact, and a metal grid; removing the substrate and the electrically conductive layer from the photovoltaic device to expose a backside surface of the absorber layer; forming at least one back contact on the backside surface of the absorber layer; and integrating the photovoltaic device with a battery, wherein the integrating includes connecting i) a positive contact of the battery with the back contact on the backside surface of the absorber layer and ii) a negative contact of the battery with the metal grid on the transparent front contact. An integrated photovoltaic device and battery is also provided.

Integrated CZT(S,Se) photovoltaic device and battery

Memory devices are provided having a cross-point array of polymer junctions with individually-programmed conductances that can be reset. In one aspect, a memory device is provided. The memory device includes: bottom metal lines; top metal lines; and polymer junctions in between the bottom metal lines and the top metal lines, wherein the polymer junctions include an organic polymer doped with a spiropyran and an acid. A method of forming and a method of operating the memory device are also provided.

Cross-point array of polymer junctions with individually-programmed conductances that can be reset

Techniques for selective placement of carbon nanotubes using bifunctional acid monolayers are provided. In one aspect, a method for selective placement of carbon nanotubes on a metal oxide surface includes the steps of: dispersing poly-fluorene polymer-wrapped carbon nanotubes in an organic solvent; creating a patterned monolayer of a bifunctional acid on the metal oxide surface, wherein the bifunctional acid comprises a first acid functional group for binding to the metal oxide surface, and a second acid functional group for binding to the poly-fluorene polymer-wrapped carbon nanotubes; and contacting the poly-fluorene polymer-wrapped carbon nanotubes dispersed in the organic solvent with the patterned monolayer of the bifunctional acid on the metal oxide surface to selectively place the carbon nanotubes on the metal oxide surface via the patterned monolayer of the bifunctional acid. A carbon nanotube-based device and method of formation thereof are also provided.

Bifunctional acid monolayers for the selective placement of carbon nanotubes

A resistive element in an electrochemical artificial neural network, includes a transition metal oxide thin film forming a working electrode, a pair of first electrodes connected to the working electrode, and a reference electrode for electrochemical doping of the working electrode. The biasing of the pair of first electrodes with respect to the reference electrode according to a determination of conductivity between the pair of first electrodes controls the resistance of the working electrode.

Architecture for an electrochemical artificial neural network

A method for forming a back contact on an absorber layer in a photovoltaic device includes forming a two dimensional material on a first substrate. An absorber layer including Cu&#x2014;Zn&#x2014;Sn&#x2014;S(Se) (CZTSSe) is grown over the first substrate on the two dimensional material. A buffer layer is grown on the absorber layer on a side opposite the two dimensional material. The absorber layer is exfoliated from the two dimensional material to remove the first substrate from a backside of the absorber layer opposite the buffer layer. A back contact is deposited on the absorber layer.

Thin film CZTSSe photovoltaic device

A force detector and method for using the same includes a lens. A cantilever is disposed below the movable lens. A laser is disposed above the movable lens and is configured to emit a beam of light that reflects from a surface of the lens and the cantilever. A processor is configured to determine a force between the movable lens and the cantilever based on a change in phase in images produced by the light reflected from the spherical surface and the light reflected from the cantilever.

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Lake Lincolndale, NY, United States of America

James Bowler Hannon