Annaka, Japan

Isao Yokokawa

This inventor holds 32 USPTO granted patents and 4 published patent applications and 15 EPO patents, primarily in SOI Wafer Manufacturing. Top assignee: Shin-Etsu Handotai Co., Ltd.. Active years: 2001-2021.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Isao Yokokawa. Retrieved from https://idiyas.com/inventor/isao-yokokawa

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 32 

% Patents Active = 90.6

 

Average Co-Inventor Count = 2.1

ph-index = 10

Forward Citations = 251(Granted Patents)


Location History:

  • Gunma-ken, JP (2001 - 2003)
  • Gunma, JP (2005 - 2011)
  • Annaka, JP (2006 - 2015)
  • Takasaki, JP (2015 - 2021)

Company Filing History:


Years Active: 2001-2021

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Areas of Expertise:
Bonded Wafer
SOI Wafer
Silicon Oxide Film
Strained Wafer
Semiconductor Production
Wafer Bonding
Wafer Fabrication
Ion Implantation
Multilayer Substrate
Warpage Calculation
Strain Measurement
32 patents (USPTO):Explore Patents

Title: The Innovations and Contributions of Isao Yokokawa

Introduction

Isao Yokokawa, an esteemed inventor based in Annaka, Japan, has made significant contributions to the field of semiconductor manufacturing. With a remarkable tally of 32 patents to his name, Yokokawa's work primarily focuses on advanced methods for producing bonded wafers and Silicon-On-Insulator (SOI) wafers, demonstrating his expertise and innovation within the industry.

Latest Patents

Among Yokokawa's latest patents are two pivotal methods aimed at improving the manufacturing process of wafers. The first patent details a sophisticated method for manufacturing a bonded wafer that incorporates an ion implantation step using a batch processing ion implanter. This innovative method involves irradiating a bond wafer with a light element ion beam while either avoiding the formation of an insulator film on its surface or utilizing a very thin insulator film. This approach ensures excellent radial uniformity of the thickness of the thin film after delamination, thus preventing degradation in ion implantation depth.

The second patent presents a method for producing an SOI wafer and includes detailed steps for bonding a bond wafer to a base wafer—both composed of silicon—with a silicon oxide film interposed. This method emphasizes cleaning the wafers with a hydrophilic solution and drying them effectively before bonding, ensuring quality manufacturing while minimizing the generation of outer-peripheral micro voids.

Career Highlights

Isao Yokokawa's career at Shin-Etsu Handotai Co., Ltd. has been marked by his relentless pursuit of innovation and excellence in semiconductor technology. His significant patent portfolio underlines his impact in the industry, where his techniques in wafer manufacturing have paved the way for advancements in semiconductor devices.

Collaborations

Collaborating with notable contemporaries in his field, Yokokawa has worked closely with colleagues such as Kiyoshi Mitani and Hiroji Aga. Together, they have created breakthroughs that drive the semiconductor industry forward, fostering a culture of innovation and teamwork.

Conclusion

Isao Yokokawa's dedication to his work and his numerous patents exemplify the spirit of innovation within the semiconductor field. His contributions at Shin-Etsu Handotai Co., Ltd. highlight the importance of collaborative efforts in advancing manufacturing techniques, ensuring that the technology used in electronics continues to evolve and improve. Yokokawa's work will undoubtedly leave a lasting legacy in the industry and inspire future inventors.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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