The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 05, 2021
Filed:
Feb. 27, 2018
Shin-etsu Handotai Co., Ltd., Tokyo, JP;
Isao Yokokawa, Takasaki, JP;
SHIN-ETSU HANDOTAI CO., LTD., Tokyo, JP;
Abstract
A bonded wafer including an ion implantation step using a batch processing ion implanter, wherein the ion implantation step is performed by irradiating a bond wafer with a light element ion beam without forming an insulator film on the bond wafer surface or through an insulator film having a thickness of 50 nm or less formed on the bond wafer surface at an implantation angle inclined from a crystal axis of the bond wafer; and the bond wafer surface is irradiated with the center of the light element ion beam shining at a position on the bond wafer surface shifted from the center of the bond wafer parallel to the center of a rotor by a predetermined amount providing a bonded wafer to prevent degradation of the radial uniformity of ion implantation depth and manufacture a bonded wafer with excellent radial uniformity of thickness of a thin film after delamination.