The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 06, 2017
Filed:
Jul. 15, 2014
Shin-etsu Handotai Co., Ltd., Tokyo, JP;
Isao Yokokawa, Takasaki, JP;
Masahiro Kato, Takasaki, JP;
SHIN-ETSU HANDOTAI CO., LTD., Tokyo, JP;
Abstract
A method of producing a bonded wafer in which wafers each having a cutout portion are used as a bond wafer and a base wafer, and either or both of settings of an ion implanter with which ions are implanted and conditions of the ion implantation are adjusted in the step of implanting the ions such that a cutout portion of either or both of the bond wafer and the base wafer after bonding is located at within a range of 0±30° or 180±30° from a position at which separation of the bond wafer begins in the step of separating the bond wafer. This method can inhibit the occurrence of large fault defect that may be generated on a surface of a thin film right after the separation, when a thin film such as an SOI layer is formed by the ion implantation separation method.