The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 09, 2014
Filed:
Mar. 28, 2011
Applicant:
Isao Yokokawa, Annaka, JP;
Inventor:
Isao Yokokawa, Annaka, JP;
Assignee:
Shin-Etsu Handotai Co., Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/66 (2006.01); H01L 21/265 (2006.01); H01J 37/30 (2006.01); H01J 37/317 (2006.01);
U.S. Cl.
CPC ...
H01L 21/265 (2013.01); H01J 37/3005 (2013.01); H01J 37/3171 (2013.01); H01L 22/12 (2013.01); H01J 2237/31703 (2013.01); H01J 2237/2445 (2013.01);
Abstract
A method for checking an ion implantation condition when ions are implanted over an entirety of one surface of a semiconductor wafer having an insulator film on the one surface, the method including checking whether the ions are implanted over the entirety of the one surface of the semiconductor wafer by directly or indirectly observing light emitted when the one surface of the semiconductor wafer is irradiated with an ion beam of the implanted ions throughout the ion implantation.