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For the Inventor, By the Inventor

Seyssinet-Pariset, France

Ioan Lucian Prejbeanu

This inventor holds 28 USPTO granted patents and 1 published patent application and 27 EPO patents, primarily in Magnetic Memory Technology. Top assignees: Crocus-Technology Sa, Commissariat a L'energie Atomique Et Aux Energies Alternatives. Active years: 2011-2018.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ioan Lucian Prejbeanu. Retrieved from https://idiyas.com/inventor/ioan-lucian-prejbeanu

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 28 

% Patents Active = 100.0

 

Average Co-Inventor Count = 1.9

ph-index = 6

Forward Citations = 202(Granted Patents)


Location History:

  • Sassenage, FR (2011 - 2013)
  • Seyssinet Pariset, FR (2013 - 2018)

Company Filing History:

goldMedal27 out of 84 
 
Crocus-Technology Sa
 patents
silverMedal1 out of 8,827 
 
Commissariat a L'energie Atomique Et Aux Energies Alternatives
 patents

Years Active: 2011-2018

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Areas of Expertise:
MRAM Cells
Thermal Assistance
Low Power Consumption
Magnetic Logic Unit
Spintronic Devices
Data Retention
Magnetic Tunnel Junction
Multibit Cells
Enhanced Reliability
Writing Procedures
Exchange Bias
Sensing Signal
28 patents (USPTO):Explore Patents
1. 10002973 - Magnetic tunnel junction with an improved tunnel barrier (2018-06-19),
2. 9886989 - Low power magnetic random access memory cell (2018-02-06),
3. 9754653 - Thermally assisted multi-level MRAM cell and method for writing a plurality of bits in the MRAM cell (2017-09-05),
4. 9728711 - Thermally-assisted MRAM cells with improved reliability at writing (2017-08-08),
5. 9679624 - Magnetic random access memory (MRAM) cell with low power consumption (2017-06-13),
6. 9583695 - Magnetic logic unit (MLU) cell and amplifier having a linear magnetic signal (2017-02-28),
7. 9431601 - Magnetoresistive element with oxygen getting layer having enhanced exchange bias and thermal stability for spintronic devices (2016-08-30),
8. 9396782 - Method for writing to a random access memory (MRAM) cell with improved MRAM cell lifespan (2016-07-19),
9. 9336846 - MRAM element with low writing temperature (2016-05-10),
10. 9331268 - MRAM element having improved data retention and low writing temperature (2016-05-03),
11. 9324936 - Magnetic logic unit (MLU) cell and amplifier having a linear magnetic signal (2016-04-26),
12. 9165626 - Self-reference magnetic random access memory (MRAM) cell comprising ferrimagnetic layers (2015-10-20),
13. 8988935 - Self-referenced MRAM cell and method for writing the cell using a spin transfer torque write operation (2015-03-24),
14. 8971102 - MRAM cell and method for writing to the MRAM cell using a thermally assisted write operation with a reduced field current (2015-03-03),
15. 8885397 - Self-referenced MRAM cell with optimized reliability (2014-11-11),

Title: Ioan Lucian Prejbeanu: A Leader in Magnetic Memory Innovations

Introduction

Ioan Lucian Prejbeanu, a prominent inventor based in Seyssinet Pariset, France, has made significant contributions to the field of magnetic memory technology. With an impressive portfolio of 28 patents, his work focuses on enhancing the efficiency and performance of magnetic random access memory (MRAM) cells.

Latest Patents

Among his latest patents, two stand out for their innovative approaches to MRAM technology. The first patent involves a "Magnetic tunnel junction with an improved tunnel barrier," which outlines a method for fabricating a magnetic tunnel junction ideal for MRAM cells. This innovation describes a process that includes the formation of a first ferromagnetic layer, a tunnel barrier layer, and a second ferromagnetic layer, with a significant focus on using metallic magnesium to create an efficient MgO barrier.

The second patent, titled "Low power magnetic random access memory cell," presents a revolutionary design for an MRAM cell capable of lower power consumption compared to traditional models. This design includes a magnetic tunnel junction that is optimized for thermally assisted write operations, thereby enhancing its performance and energy efficiency.

Career Highlights

Throughout his career, Ioan has worked with leading organizations such as Crocus Technology and the Commissariat à l'Énergie Atomique. His role in these companies has propelled advancements in the field of magnetic memory, positioning him as a key figure in technological innovation.

Collaborations

Ioan Lucian Prejbeanu has collaborated with notable individuals in the industry, including Lucien Lombard and Kenneth MacKay. These partnerships have facilitated sharing of ideas and expertise, fostering advancements in MRAM technologies.

Conclusion

With a commendable number of patents and a strong career marked by collaboration in significant organizations, Ioan Lucian Prejbeanu continues to be an influential inventor in the realm of magnetic memory technology. His latest innovations promise to reshape the landscape of MRAM, highlighting the impact of dedicated researchers in the advancement of modern technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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