Seyssinet-Pariset, France

Ioan Lucian Prejbeanu

USPTO Granted Patents = 28 

 

Average Co-Inventor Count = 1.9

ph-index = 6

Forward Citations = 198(Granted Patents)


Location History:

  • Sassenage, FR (2011 - 2013)
  • Seyssinet Pariset, FR (2013 - 2018)

Company Filing History:


Years Active: 2011-2018

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28 patents (USPTO):

Title: Ioan Lucian Prejbeanu: A Leader in Magnetic Memory Innovations

Introduction

Ioan Lucian Prejbeanu, a prominent inventor based in Seyssinet Pariset, France, has made significant contributions to the field of magnetic memory technology. With an impressive portfolio of 28 patents, his work focuses on enhancing the efficiency and performance of magnetic random access memory (MRAM) cells.

Latest Patents

Among his latest patents, two stand out for their innovative approaches to MRAM technology. The first patent involves a "Magnetic tunnel junction with an improved tunnel barrier," which outlines a method for fabricating a magnetic tunnel junction ideal for MRAM cells. This innovation describes a process that includes the formation of a first ferromagnetic layer, a tunnel barrier layer, and a second ferromagnetic layer, with a significant focus on using metallic magnesium to create an efficient MgO barrier.

The second patent, titled "Low power magnetic random access memory cell," presents a revolutionary design for an MRAM cell capable of lower power consumption compared to traditional models. This design includes a magnetic tunnel junction that is optimized for thermally assisted write operations, thereby enhancing its performance and energy efficiency.

Career Highlights

Throughout his career, Ioan has worked with leading organizations such as Crocus Technology and the Commissariat à l'Énergie Atomique. His role in these companies has propelled advancements in the field of magnetic memory, positioning him as a key figure in technological innovation.

Collaborations

Ioan Lucian Prejbeanu has collaborated with notable individuals in the industry, including Lucien Lombard and Kenneth MacKay. These partnerships have facilitated sharing of ideas and expertise, fostering advancements in MRAM technologies.

Conclusion

With a commendable number of patents and a strong career marked by collaboration in significant organizations, Ioan Lucian Prejbeanu continues to be an influential inventor in the realm of magnetic memory technology. His latest innovations promise to reshape the landscape of MRAM, highlighting the impact of dedicated researchers in the advancement of modern technology.

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