The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 13, 2017
Filed:
Nov. 19, 2013
Crocus Technology SA, Grenoble, FR;
Lucien Lombard, Grenoble, FR;
Ioan Lucian Prejbeanu, Seyssinet Pariset, FR;
CROCUS TECHNOLOGY SA, Grenoble, FR;
Abstract
A magnetic random access memory (MRAM) cell including a magnetic tunnel junction containing: a storage layer including at least one storage ferromagnetic layer, each storage ferromagnetic layer having a storage magnetization; an antiferromagnetic storage layer pinning the storage magnetization at a low threshold temperature and freeing them at a high temperature threshold; a reference layer; and a tunnel barrier layer between the reference layer and the storage layer. The magnetic tunnel junction also includes a free ferromagnetic layer having a free magnetization adapted to induce a magnetic stray field magnetically coupling the free ferromagnetic layer with the storage layer; such that the storage magnetization can be switched by the magnetic stray field when the magnetic tunnel junction is at the high temperature threshold. The disclosed MRAM cell has low power consumption.