The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 11, 2014
Filed:
Nov. 21, 2012
Crocus Technology SA, Grenoble Cedex, FR;
Ioan Lucian Prejbeanu, Seyssinet Pariset, FR;
Crocus Technology SA, Grenoble, FR;
Abstract
Magnetic random access memory (MRAM) element suitable for a thermally-assisted write operation and for a self-referenced read operation, including a magnetic tunnel junction portion having a first portion and a second portion, each portion including a storage layer, a sense layer, and a tunnel barrier layer; the magnetic tunnel junction further including an antiferromagnetic layer between the two storage layers and pinning a storage magnetization of each of the storage layers below a critical temperature, and freeing them at and above the critical temperature; such that, during a write operation, a free magnetization of each of the sense layer is magnetically saturable according to a direction of a write magnetic field when applied; and the storage magnetizations are switchable in a direction substantially parallel and corresponding to the direction of the saturated free magnetizations.