The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 06, 2018
Filed:
Jan. 18, 2012
Clarisse Ducruet, Grenoble, FR;
Céline Portemont, Semons, FR;
Ioan Lucian Prejbeanu, Seyssinet Pariset, FR;
Clarisse Ducruet, Grenoble, FR;
Céline Portemont, Semons, FR;
Ioan Lucian Prejbeanu, Seyssinet Pariset, FR;
CROCUS TECHNOLOGY SA, Grenoble, FR;
Abstract
The present disclosure concerns a magnetic random access memory (MRAM) cell suitable for performing a thermally assisted write operation or a spin torque transfer (STT) based write operation, comprising a magnetic tunnel junction comprising a top electrode; a tunnel barrier layer comprised between a first ferromagnetic layer having a first magnetization direction, and a second ferromagnetic layer having a second magnetization direction adjustable with respect to the first magnetization direction; a front-end layer; and a magnetic or metallic layer on which the second ferromagnetic layer is deposited; the second ferromagnetic layer being comprised between the front-end layer and the tunnel barrier layer and having a thickness comprised between about 0.5 nm and about 2 nm, such that magnetic tunnel junction has a magnetoresistance larger than about 100%. The MRAM cell disclosed herein has lower power consumption compared to conventional MRAM cells.