The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 10, 2016
Filed:
Jan. 16, 2014
Applicant:
Crocus Technology SA, Grenoble, FR;
Inventors:
Ioan Lucian Prejbeanu, Seyssinet Pariset, FR;
Jerome Moritz, St-Pierre-de-Bressieux, FR;
Bernard Dieny, Lans-en-Vercors, FR;
Assignee:
CROCUS TECHNOLOGY SA, Grenoble, FR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 11/16 (2006.01); H01L 43/02 (2006.01); H01L 43/08 (2006.01); H01L 43/10 (2006.01);
U.S. Cl.
CPC ...
G11C 11/161 (2013.01); G11C 11/16 (2013.01); G11C 11/1675 (2013.01); H01L 43/02 (2013.01); H01L 43/08 (2013.01); H01L 43/10 (2013.01); G11C 2211/5615 (2013.01);
Abstract
MRAM element having a magnetic tunnel junction including a reference layer, a storage layer, a tunnel barrier layer between the reference and storage layers, and a storage antiferromagnetic layer. The storage antiferromagnetic layer has a first function of exchange-coupling a storage magnetization of the storage layer and a second function of heating the magnetic tunnel junction when a heating current in passed in the magnetic tunnel junction. The MRAM element has better data retention and low writing temperature.